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2N2270 - SI NPN LO-PWR BJT

2N2270_5539428.PDF Datasheet

Part No.

2N2270

Description

SI NPN LO-PWR BJT

File Size

74.33K / 1 Page

Maker

New Jersey Semi-Conductor Products, Inc.

JITONG TECHNOLOGY
(CHINA HK & SZ)
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Part: 2N2270

Maker: MOT

Pack: CAN

Stock: 1630

Unit price for :

50: $5.67

100: $5.39

1000: $5.10

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PART	Description	Maker
2N5812	SI NPN LO-PWR BJT	New Jersey Semi-Conductor Products, Inc.
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2N3340	SI NPN LO-PWR BJT MANUFACTURER	New Jersey Semi-Conductor Products, Inc.
CIL858O CIL859O CIL2229Y CIL2331 CSC2331 CIL857O C	TRANSISTOR \| BJT \| NPN \| 250V V(BR)CEO \| TO-237VAR TRANSISTOR \| BJT \| NPN \| 300V V(BR)CEO \| TO-237 TRANSISTOR \| BJT \| NPN \| 150V V(BR)CEO \| TO-237 TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| TO-237VAR TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 700MA I(C) \| TO-237AA TRANSISTOR \| BJT \| NPN \| 200V V(BR)CEO \| TO-237VAR TRANSISTOR \| BJT \| NPN \| 30V V(BR)CEO \| 1.5A I(C) \| TO-237AA TRANSISTOR \| BJT \| PNP \| 30V V(BR)CEO \| 1.5A I(C) \| TO-237 TRANSISTOR \| BJT \| PNP \| 160V V(BR)CEO \| TO-237 晶体管\|晶体管\|进步党\| 160V五（巴西）总裁\|37 TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 1.5A I(C) \| TO-237AA	Infineon Technologies AG
FXT3866SM FXT449SM FXT549SM FXT749SM FXT649SM FXT6	TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 1A I(C) \| SOT-89 TRANSISTOR \| BJT \| PNP \| 20V V(BR)CEO \| 1A I(C) \| SOT-89 TRANSISTOR \| BJT \| PNP \| 25V V(BR)CEO \| 2A I(C) \| SO TRANSISTOR \| BJT \| NPN \| 25V V(BR)CEO \| 2A I(C) \| SO TRANSISTOR \| BJT \| NPN \| 300V V(BR)CEO \| 500MA I(C) \| SO TRANSISTOR \| BJT \| NPN \| 150V V(BR)CEO \| 1A I(C) \| SO 晶体管\|晶体管\| npn型\| 150伏五（巴西）总裁\| 1A条一（c）\| TRANSISTOR \| BJT \| PNP \| 100V V(BR)CEO \| 2A I(C) \| SO 晶体管\|晶体管\|进步党\| 100V的五（巴西）总裁\|甲一（c）\| TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 1A I(C) \| SOT-89 晶体管\|晶体管\|进步党\| 60V的五（巴西）总裁\| 1A条一（c）\|采用SOT - 89 TRANSISTOR \| BJT \| NPN \| 45V V(BR)CEO \| 1A I(C) \| SO 晶体管\|晶体管\|叩\| 45V的五（巴西）总裁\| 1A条一（c）\| TRANSISTOR \| BJT \| NPN \| 30V V(BR)CEO \| 400MA I(C) \| SO 晶体管\|晶体管\|叩\| 30V的五（巴西）总裁\| 400mA的一（c）\| TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 1A I(C) \| SOT-89	Zetex Semiconductor PLC Fujitsu, Ltd. Bourns, Inc. Amphenol, Corp.
ECG105 ECG85 ECG91 ECG90 ECG92 ECG101	Pressure (Pa): 770 ( 3.09inchH2O / 75.1 ( 0.30inchH2O ); Noise (dB[A]): 71 / 40; Mass (g): 760; TRANSISTOR \| BJT \| NPN \| 70V V(BR)CEO \| 400MA I(C) \| TO-92 TRANSISTOR \| BJT \| PNP \| 120V V(BR)CEO \| 50MA I(C) \| TO-92VAR TRANSISTOR \| BJT \| NPN \| 120V V(BR)CEO \| 50MA I(C) \| TO-92VAR TRANSISTOR \| BJT \| NPN \| 200V V(BR)CEO \| 15A I(C) \| SIP 晶体管\|晶体管\| npn型\| 200伏五（巴西）总裁\| 15A条（c）的\|园区 TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 300MA I(C) \| TO-5 晶体管\|晶体管\|叩\| 20V的五（巴西）总裁\| 300mA的一（c）\|	NXP Semiconductors N.V.
MPSA12DA MPSA12DB MPSA12DC MPSA42DB MPSA42DC MPSA4	TRANSISTOR \| BJT \| PNP \| 150V V(BR)CEO \| CHIP 晶体管\|晶体管\|进步党\| 150伏五（巴西）总裁\|芯片 TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 60V V(BR)CEO \| CHIP 晶体管\|晶体管\|达林顿\|叩\| 60V的五（巴西）总裁\|芯片 TRANSISTOR \| BJT \| NPN \| 140V V(BR)CEO \| CHIP 晶体管\|晶体管\| npn型\| 140伏特五（巴西）总裁\|芯片 TRANSISTOR \| BJT \| PNP \| 300V V(BR)CEO \| CHIP TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 30V V(BR)CEO \| CHIP TRANSISTOR \| BJT \| NPN \| 300V V(BR)CEO \| CHIP TRANSISTOR\|BJT\|DARLINGTON\|NPN\|CHIP TRANSISTOR\|BJT\|DARLINGTON\|NPN\|30VV(BR)CEO\|CHIP	Zetex Semiconductor PLC Central Semiconductor, Corp. Cypress Semiconductor, Corp.
DTL1636 DTL1658 DTL1638 DTL1644	TRANSISTOR \| BJT \| NPN \| 150V V(BR)CEO \| 1A I(C) \| TO-210AE TRANSISTOR \| BJT \| NPN \| 200V V(BR)CEO \| 1A I(C) \| TO-66 TRANSISTOR \| BJT \| NPN \| 200V V(BR)CEO \| 1A I(C) \| TO-3 晶体管\|晶体管\| npn型\| 200伏五（巴西）总裁\| 1A条一（c）\| TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 1A I(C) \| TO-66	Shindengen Electric Manufacturing Co., Ltd.
2SD2309A 2SC3800 2SC3800Q 2SC3800R 2SD2011A 2SD230	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 60V V(BR)CEO \| 4A I(C) \| SIP TRANSISTOR \| BJT \| NPN \| 150V V(BR)CEO \| 50MA I(C) \| TO-92 SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 100V V(BR)CEO \| 2A I(C) \| SIP 晶体管\|晶体管\|达林顿\|叩\| 100V的五（巴西）总裁\|甲一（c）\|园区 TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 80V V(BR)CEO \| 4A I(C) \| SIP 晶体管\|晶体管\|达林顿\|叩\| 80V的五（巴西）总裁\| 4A条一（c）\|园区 TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 100V V(BR)CEO \| 2A I(C) \| SIP 晶体管\|晶体管\|达林顿\|进步党\| 100V的五（巴西）总裁\|甲一（c）\|园区 TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 100V V(BR)CEO \| 2A I(C) \| TO-92	Avago Technologies, Ltd. Atmel, Corp. HIROSE ELECTRIC Co., Ltd.
BC413B BF479S	TRANSISTOR \| BJT \| NPN \| 30V V(BR)CEO \| 100MA I(C) \| TO-92 晶体管\|晶体管\|叩\| 30V的五（巴西）总裁\| 100mA的一（c）\|2 TRANSISTOR \| BJT \| PNP \| 25V V(BR)CEO \| 50MA I(C) \| MACRO-T TRANSISTOR\|BJT\|NPN\|30VV(BR)CEO\|100MAI(C)\|TO-92	Vectron International, Inc.

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